ar c hive inf o rmati o n archive information will be replaced by MHL21336n in march 2005. there are no form, fit or function changes with this part replacement. n suffix added to part number to indicate transition to lead - free terminations. MHL21336 1 rf device data freescale semiconductor 3g band rf linear ldmos amplifier designed for ultra - linear amplifier applications in 50 ohm system s operating in the 3g frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital cdma modulation systems. ? third order intercept: 45 dbm typ ? power gain: 31 db typ (@ f = 2140 mhz) ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications table 1. absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +5 dbm storage temperature range t stg - 40 to +100 c operating case temperature range t c - 20 to +100 c table 2. electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 ? system) characteristic symbol min typ max unit supply current i dd ? 500 525 ma power gain (f = 2140 mhz) g p 30 31 32 db gain flatness (f = 2110 - 2170 mhz) g f ? 0.15 0.4 db power output @ 1 db comp. (f = 2140 mhz) p out 1 db 34 35 ? dbm input vswr (f = 2110 - 2170 mhz) vswr in ? 1.2:1 1.5:1 third order intercept (f1 = 2137 mhz, f2 = 2142 mhz) ito 44 45 ? dbm noise figure (f = 2170 mhz) nf ? 4.5 5 db MHL21336 rev. 4, 1/2005 freescale semiconductor technical data 2110 - 2170 mhz 3.0 w, 31 db rf linear ldmos amplifier case 301ap - 02, style 1 MHL21336 ? freescale semiconductor, inc., 2005. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor MHL21336 typical characteristics 2800 ?40 40 1400 orl g p f, frequency (mhz) figure 1. power gain, input return loss, output return loss versus frequency g p , power gain/return loss (db) v dd = 26 vdc t c = 25 c 30 20 10 0 ?10 ?20 ?30 1600 1800 2000 2200 2400 2600 irl 25 55 1800 f, frequency (mhz) figure 2. p1db, ito versus frequency p1db, ito (dbm) v dd = 26 vdc t c = 25 c ito p1db 50 45 40 35 30 1900 2000 2100 2200 2300 2400 2500 120 ?40 ?20 0 20 40 60 80 100 20 40 400 600 temperature ( c) figure 3. power gain, i dd versus temperature g p v dd = 26 vdc f = 2140 mhz i dd g p , power gain (db) i dd (ma) 35 550 30 500 25 450 120 ?40 ?20 0 20 40 60 80 100 42 48 32 38 temperature ( c) figure 4. ito, p1db versus temperature v dd = 26 vdc f = 2140 mhz ito p1db ito (dbm) p1db (dbm) 47 37 46 36 45 35 44 34 43 33 120 ?40 ?20 0 20 40 60 80 100 ?1500 ?1400 1.9 2.4 temperature ( c) figure 5. phase (1) , group delay (1) versus temperature phase v dd = 26 vdc f = 2140 mhz group delay group delay (ns) phase ( ) ?1420 2.3 ?1440 2.2 ?1460 2.1 ?1480 2 120 0 0.6 ?40 0 0.6 temperature ( c) figure 6. gain flatness, phase linearity versus temperature v dd = 26 vdc f = 2110 ? 2170 mhz g f , gain flatness (db) phase linearity ( ) 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 ?20 0 20 40 60 80 100 g f phase linearity 1. in production test fixture
ar c hive inf o rmati o n archive information MHL21336 3 rf device data freescale semiconductor typical characteristics 30 22 23 24 25 26 27 28 29 30.8 31.8 200 700 g p voltage (volts) figure 7. power gain, i dd versus voltage g p , power gain (db) f = 2140 mhz t c = 25 c i dd (ma) i dd 31.6 600 31.4 500 31.2 400 31 300 30 22 23 24 25 26 27 28 29 44.5 47.5 34 37 ito p1db voltage (volts) figure 8. ito, p1db versus voltage ito (dbm) f = 2140 mhz t c = 25 c 47 36.5 46.5 36 46 35.5 45.5 35 45 34.5 p1db (dbm) 30 22 23 24 25 26 27 28 29 ?1439 ?1435 2.1 2.3 phase voltage (volts) figure 9. phase (1) , group delay (1) versus voltage group delay (ns) f = 2140 mhz t c = 25 c group delay phase ( ) ?1436 2.25 ?1437 2.2 ?1438 2.15 30 0 0.35 22 0 0.35 g f phase linearity voltage (volts) figure 10. phase linearity, gain flatness versus voltage g f gain flatness (db) phase linearity ( ) f = 2110 ? 2170 mhz t c = 25 c 0.3 0.3 0.25 0.25 0.2 0.2 0.15 0.15 0.1 0.1 0.05 0.05 23 24 25 26 27 28 29 , 1. in production test fixture
ar c hive inf o rmati o n archive information 4 rf device data freescale semiconductor MHL21336 notes
ar c hive inf o rmati o n archive information MHL21336 5 rf device data freescale semiconductor notes
ar c hive inf o rmati o n archive information 6 rf device data freescale semiconductor MHL21336 notes
ar c hive inf o rmati o n archive information MHL21336 7 rf device data freescale semiconductor package dimensions notes: 1. interpret dimensions and tolerances per asme y14.5m, 1994. 2. controlling dimension: inch. 3. dimension "f" to center of leads. style 1: pin 1. rf input 2. vdd1 3. vdd2 4. rf output case: ground g w n l h r k j a m 0.020 (0.51) t m m 0.020 (0.51) t 12 34 f e c seating plane dim min max min max millimeters inches a 1.760 1.780 44.70 b 1.370 1.390 34.80 35.31 c 0.245 0.265 6.22 6.73 d 0.017 0.023 0.43 0.58 e 0.080 0.100 2.03 2.54 f 0.086 bsc 2.18 bsc g 1.650 bsc 41.91 bsc h 1.290 bsc 32.77 bsc j 0.266 0.280 6.76 7.11 k 0.125 0.165 3.18 4.19 l 0.990 bsc 25.15 bsc 0.390 bsc 9.91 bsc n p 0.118 0.132 3.00 3.35 q r 0.535 0.555 13.59 14.10 s 0.445 0.465 11.30 11.81 w 45.21 case 301ap - 02 issue c b m 0.020 (0.51) t m m s m 0.008 (0.20) a m t 0.090 bsc 2.29 bsc 0.008 0.013 0.20 0.33 d 4x q 2x b a s s a t p 4x
ar c hive inf o rmati o n archive information 8 rf device data freescale semiconductor MHL21336 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com MHL21336 rev. 4, 1/2005 document number:
|
